The measurement challenge behind the shift to GaN in high-frequency semiconductors

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Mention high-frequency semiconductors, and the conversation often begins with gallium arsenide (GaAs). For decades, GaAs has been the material of choice for high-performance radio frequency (RF) devices that enable a wide range of applications, including satellite communications, radar, and mobile networks.

It is a mature, well-understood technology, and large, high-quality wafers can be grown economically, enabling consistent device performance and scalable manufacturing.