Imec and ASML have announced that the two companies have printed the first logic and DRAM patterns using ASML's experimental Twinscan EXE:5000 EUV lithography tool, the industry's first High-NA EUV scanner. The lithography system achieved resolution that is good enough for 1.4nm-class process technology with just one exposure, which confirms the capabilities of the system and that development of the High-NA ecosystem remains on-track for use in commercial chip production later this decade.
"The results confirm the long-predicted resolution capability of High NA EUV lithography, targeting sub 20nm pitch metal layers in one single exposure," said Luc Van den hove, president and CEO of imec. "High NA EUV will therefore be highly instrumental to continue the dimensional scaling of logic and memory technologies, one of the key pillars to push the roadmaps deep into the ‘angstrom era'. These early demonstrations were only possible thanks to the set-up of the joint ASML-imec lab allowing our partners to accelerate the introduction of High NA lithography into manufacturing."
