San Jose-based NEO Semiconductor has launched 3D X-DRAM. This patented DRAM technology has the ambitious aim to "solve DRAM’s capacity bottleneck and replace the entire 2D DRAM market." According to company roadmaps, applying 3D NAND-like DRAM cell arrays in DRAM will deliver 1Tb memory ICs by 2030.
1Tb ICs would mean the potential to slap 2TB onto a single DIMM with relative ease — double-sided DIMMs with eight chips per side would get there. 4TB using 32 ICs would also be possible. Obviously that's more for servers than anything consumers are likely to need within the next ten years, with many still getting by with 8GB or 16GB. Note that current memory solutions top out at 128GB per DIMM for registered DDR4 server solutions, using 32 32Gb ICs. Readily available DDR5 registered DIMMs currently offer up to 64GB (32 16Gb ICs), though higher capacity modules are on the horizon.
Again, that's for DRAM, not some kind of Flash NAND. But NEO Semiconductor has developed 3D X-DRAM technology with at least some inspiration from 3D NAND. It uses what is claimed to be "the world’s first 3D NAND-like DRAM cell array" for its capacity boosting USP. There are key differences though, and NEO has already applied for the various patents to protect its IP.
