Given how SRAM-intensive modern designs are, SRAM cell size and density are major characteristics of new fabrication technologies. Apparently, the SRAM density of Intel's 18A manufacturing process (1.8nm-class) is considerably lower than that of TSMC's N2 (2nm-class), and is closer to TSMC's N3, according to the ISSCC 2025 Advance Program. Still, Intel's 18A could have other major advantages over N2.
Intel's 18A fabrication process features a high-density SRAM bit cell size of 0.021 µm^2 (therefore achieving an SRAM density of approximately 31.8 Mb/mm^2), which is a major improvement compared to a high-density SRAM bit cell size of 0.024 µm^2 in Intel 4, but aligns with what TSMC's N3E and N5 offer. By contrast, TSMC's N2 manufacturing technology shrinks HD SRAM bit cell size to around 0.0175 µm^2, enabling SRAM density of 38 Mb/mm^2.
