Researchers from IBM, IMEC, Samsung, and TSMC will present their latest work on vertically-stacked complementary field-effect transistors (CFETs) at the upcoming International Electron Devices Meeting (IEDM) in December 2024, reports eeNewsEurope. CFET is usually seen as a successor to gate-all-around transistors that will enable future technology scaling, but the industry has yet to adopt GAA FETs for mass production.
The idea of CFETs, which stack n-type and p-type transistors on top of each other, was first proposed by the IMEC research institute in 2018. Even today, the actual implementation of CFET is still broadly in the field of research. According to IMEC's own roadmap, CFETs might reach widespread production by the A5 node, projected for around 2032 if everything goes well. Nonetheless, companies like Intel and TSMC began to demonstrate their advances in the field of CFETs in recent years, so it makes sense to take a look at what the IEDM brings.
