TSMC disclosed major roadmap updates for its N3 (3-nanometer class) family of process technologies at its 2023 North American Technology Symposium this week. As TSMC's final high-performance node based on FinFET transistors, N3 will last for many years and will include multiple versions, including N3P, a performance-enhancing optical shrink of N3E, and performance-focused N3X for HPC applications that tolerate high leakage and power.
TSMC's mass production on its N3 (also known as N3B) process technology is already underway, but this node uses extreme ultraviolet lithography on up to 25 layers and can even use EUV double patterning, which makes it a particular expensive node to use. As a result, TSMC expects the majority of its clients to use N3E, which can use EUV on up to 19 layers, does not use double patterning EUV, has a wider process window, and better yields. N3E, which will be used for high volume manufacturing in H2 2023, will also be the base for TSMC's further 3nm evolution.
