SK Hynix said that it had started volume production of its HBM3E memory and would supply it to a customer in late March. The South Korean company is the second DRAM producer to announce mass production of HBM3E, so the market of ultra-high-performance memory will have some competition, which is good for companies that plan to use HBM3E.
According to specifications, SK Hynix's HBM3E known good stack dies (KGSDs) feature data transfer rates up to 9.2 GT/s, a 1024-bit interface, and a bandwidth of 1.18 TB/s, which is massively higher than the 6.4 GT/s and 819 GB/s offered by HBM3. The company does not say whether it mass produces 8Hi 24GB HBM3E memory modules or 12Hi 36GB HBM3E devices, but it will likely begin its HBM3E ramp from lower-capacity products as they are easier to make.
