Samsung plans to adopt hybrid bonding technology for its HBM4 to reduce thermals and enable an ultra-wide memory interface, the company revealed at the AI Semiconductor Forum held in Seoul, South Korea. By contrast, the company's rival SK hynix might delay adoption of hybrid bonding technology, reports EBN.
High-bandwidth memory (HBM) stack multiple memory devices on top of a base die. For now, memory dies in HBM stacks are typically joined together using microbumps (that carry data, power, and control signals between stacked dies) and bonding is performed using techniques like mass reflow with molded underfill (MR-MUF) or thermal compression using a non-conductive film (TC-NCF).
