
Samsung is set to showcase numerous new products at the forthcoming International Solid-State Circuits Conference (ISSCC), including a superfast DDR5 memory chip, 280 layer QLC NAND flash memory, and the the world's fastest GDDR7.
But while Samsung will certainly draw a lot of attention, it’s not the only game in town, as its South Korean rival SK hynix is also set to reveal its new HBM3E DRAM straight after Samsung finishes talking about its 3D-NAND flash memory at the High-Density Memory and Interfaces session.