Micron introduced its 16Gb DDR5 devices made on its new 1γ (1-gamma) fabrication process that uses EUV lithography, a first for Micron, today on March 25. The new IC not only delivers higher performance than its predecessor, but it also consumes less power and is poised to be cheaper to make. The company also said that its 1γ manufacturing technology (6th Generation 10nm-class node) will eventually be adopted for other DRAM products.
