Micron has begun sampling of its first LPDDR5X memory devices produced using its new 1γ (1-gamma) fabrication process that uses EUV lithography with customers, the company announced at its conference call with investors and financial analysts this week. The new devices are believed to be more performance efficient, but perhaps more importantly, they highlight that Micron is starting to produce DRAMs using a technology that relies on EUV lithography.
"We are making excellent progress on our 1γ (1-gamma) DRAM technology node, with yield ramping ahead of the record pace we achieved on our 1ß (1-beta) node," said Sanjay Mehrotra, chief executive of Micron. "We completed several key product milestones during the quarter, including the first qualification sample shipments of 1γ-based LP5 DRAM."
