Yesterday, GlobalWafers and the U.S. government officially inked an agreement under which the U.S. government will provide $406 million funding to GlobalWafer. The funding will help GlobalWafers establish the production of 300mm wafers in the U.S. and expand production of 300mm silicon-on-insulator wafers. The move is designed to boost domestic production of microelectronics and localization of wafers production is a critical step towards achieving this goal.
GlobalWafers plans to invest $4 billion in its Missouri and Texas facilities. In Texas, the company will establish the first domestic high-volume 300mm silicon wafer facility to make wafers suitable for advanced process technologies that are used for leading-edge processors and memory. Additionally, a portion of this site will be converted to produce 150mm and 200mm silicon carbide (SiC) wafers, which are essential for high-voltage applications, such as electric vehicles and clean energy systems. The new facility will establish Texas as a critical hub for production of wafers for advanced microelectronics and for high-voltage applications.,
