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TechRadar
TechRadar
Wayne Williams

Faster than SRAM! New flash memory tech from China is millions of times faster than NAND rivals from US, Japan or Korea - but please change its name

Researchers at Fudan University, Shanghai.

  • Chinese researchers have developed super-fast non volatile flash memory
  • Graphene channel enables 400 picosecond write speed and persistent storage
  • "PoX" device targets AI bottlenecks with low power, high speed performance
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