Your iPhone 15 charger contains a material with quasi super-powers — gallium nitride can withstand deadly radiations and extremely high temperatures that would literally fry silicon chips

A wire-bonded die consisting of over 20 gallium nitride high-electron mobility transistors, seen here under a microscope, could be used in nuclear sensing equipment because of its high resistance to radiation.

Gallium nitride (GaN) is a wide-bandgap semiconductor material derived from gallium and nitrogen. 

Used in LEDs since the 1990s, it is known for its robust, hexagonal crystal structure and can handle larger electric fields in a compact form factor compared to silicon, enabling faster switching.