U.S. DARPA responds to China's gallium export controls: awards Raytheon three-year contract to develop new types of transistors

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Advanced power chips and radio frequency amplifiers rely on wide-bandgap (WBG) semiconductor materials like gallium nitride (GaN). China controls the lion's share of gallium supply and its recent export restriction on gallium potentially mean additional risks for American national security. To respond to this challenge, the U.S. Department of Defense agency DARPA (Defense Advanced Research Agency) has tasked Raytheon to develop synthetic diamond and aluminum nitride semiconductors. 

Second response to China's Gallium export controls: Diamond & AlN."DARPA has awarded Raytheon a contract to develop “foundational” ultrawide bandgap semiconductors based on diamond and aluminum nitride technology. The semiconductors could increase power delivery and better… pic.twitter.com/ZI5rbzBTNnOctober 8, 2024