TSMC announced its leading-edge 1.6nm-class process technology today, a new A16 manufacturing process that will be the company's first Angstrom-class production node and promises to outperform its predecessor, N2P, by a significant margin. The technology's most important innovation will be its backside power delivery network (BSPDN).
Just like TSMC's 2nm-class nodes (N2, N2P, and N2X), the company's 1.6nm-class fabrication process will rely on gate-all-around (GAA) nanosheet transistors, but unlike the current and next-generation nodes, this one uses backside power delivery dubbed Super Power Rail. Transistor and BSPDN innovations enable tangible performance and efficiency improvements compared to TSMC's N2P: the new node promises an up to 10% higher clock rate at the same voltage and a 15%–20% lower power consumption at the same frequency and complexity. In addition, the new technology could enable 7%–10% higher transistor density, depending on the actual design.
