
10nm technology might be an outdated process node for CPUs, but for DRAM, it is still the bleeding edge. SK hynix has announced the development of the world’s first “sixth-generation” 10nm-class DDR5 DRAM. Mass production is reported to be completed within this year, while formal supply will begin next year.
SK Hynix’s 6th-gen DDR5 DRAM, dubbed its “1c process,” is an evolution over its 1b process node, built on 10nm lithography. 1c is SK Hynix’s first 16Gb DRAM module, reportedly 11% faster than its previous-generation counterpart and 9% more energy efficient. Thanks to the power efficiency of its 6th Gen 1c process, SK hynix believes data centers’ electricity bills can be reduced by up to 30%.