Scientists inch closer to holy grail of memory breakthrough — producing tech that combines NAND and RAM features could be much cheaper to produce and consume far less power

South Korea Semiconductor.

A revolutionary new memory device that combines the features of DRAM and NAND flash memory is being developed by a group of researchers at the Korea Advanced Institute of Science and Technology (KAIST). 

Led by Professor Shinhyun Choi of the School of Electrical Engineering, the team's breakthrough promises cheaper, power-efficient solutions that could potentially replace existing memory solutions or be used to implement neuromorphic computing for the next-generation of AI hardware.