Samsung says it has begun the mass production of its 1Tb quad-level cell (QLC) 9th-generation V-NAND, an industry first. The development follows the company's production of triple-level cell (TLC) 9th-generation V-NAND earlier in 2024, and reflects a broader industry shift from TLC to QLC technology to meet the growing demand for higher-capacity and more efficient storage solutions.
The new QLC V-NAND incorporates innovative technologies such as Channel Hole Etching, which enables a higher layer count through a double stack structure, resulting in approximately 86% higher bit density compared to the previous generation of QLC V-NAND. Samsung says the increase in density allows for greater storage capacity in the same physical space, addressing the needs of applications that require large amounts of data storage.
