According to a new report on Korean outlet Dailian, Samsung has announced early results from mass production of its next-gen 2 nm chip node. But the company is only making very modest claims versus its existing 3 nm silicon.
Dailian quotes a Samsung report claiming, "the 2nm first-generation gate-all-around (GAA) process has improved performance by 5%, power efficiency by 8%, and area by 5% compared to the 3nm second-generation process." At first glance, those are not exactly mind blowing advances.
