Samsung is developing a new type of memory called Low Latency Wide I/O (LLW) DRAM, which promises to bring together very high bandwidth, low latency, and low power consumption. The company positions its new memory for devices that need to operate large language models (LLMs) on-device, though such DRAMs could be used for a wide variety of client workloads.
Samsung's LLW DRAM is a low-power memory that features wide I/O, low latency and boasts a bandwidth of 128 GB/s, presumably per module (or rather a stack). To put the number into context, a 128-bit DDR5-8000 memory subsystem can offer a similar bandwidth of 128 GB/s. Meanwhile, one of the key features of Samsung's LLW DRAM is its low power draw of 1.2pJ/bit, yet Samsung does not disclose at what data rate its LLW DRAM hits the said power consumption.
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