Today Micron announced its new HBM3 Gen2 memory is sampling to its customers, claiming it's the world's fastest with 1.2 TB/s of aggregate bandwidth and the highest-capacity 8-high stack at 24GB (36GB is coming). Micron also claims its new memory is the most power efficient, with a 2.5x improvement-per-watt compared to the company's previous-gen HBM2E. Micron's HBM3 Gen2 also has a 12-high stack option that totals 36GB that's coming 'soon.'
Micron is the first to sample what it terms second-gen HBM3 memory, outstripping rivals like SK hynix and Samsung, which could be an advantage given the current AI arms race that finds vendors scrambling for the fastest and most capacious memory possible to power memory-hungry AI accelerators.
