
Kioxia, in partnership with Sandisk, revealed its 10th generation 3D NAND flash memory technology in a press release that coincided with the International Solid-State Circuits Conference (ISSCC) 2025. The new flash delivers up to 33% better performance and enhanced bit density, interface speeds, and power efficiency compared to prior generations.
Kioxia's new 3D flash memory features a CMOS directly Bonded to Array (CBA), which is created by bonding a CMOS wafer and a cell array wafer, which are manufactured separately. This isn't anything new, as it was also featured in Kioxia's 8th generation 3D NAND products. However, the larger highlight is the new interface standard, Toggle DDR6.0, which allows for up to a 4.8 Gb/s NAND interface speed.