Kioxia and Sandisk last week said they had started sampling of their latest 3D NAND memory with 332 active layers that features a combination of the industry's leading areal density and performance. The new 10th Generation BiCS 3D TLC NAND is set to address density and performance-sensitive data center applications, as well as promises to surpass Samsung’s latest V10-class 3D NAND in terms of storage density.
Unlike the previous generations, 10th Generation BiCS (BiCS10) is explicitly aimed at data center-grade storage, where bit density and performance are more important than cost. Indeed, the new type of memory features a 332-layer active layer architecture, greater than 29 Gb/mm2 density, and a 4,800 MT/s data transfer rate to enable extreme performance for data center solid-state drives featuring PCIe 5.0 and 6.0 interfaces. Kioxia and Sandisk plan to offer BiCS9 NAND specifically for client applications.
