Kioxia and Sandisk used the ongoing Future of Memory and Storage Conference to formally introduce their latest BiCS10 3D QLC NAND device, which features the world's highest areal density and is aimed at high-capacity data center-grade solid-state drives that are meant to maximize storage density in data centers. The new IC comes at the step of Kioxia's and Sandisk's BiCS 3D TLC NAND device that offers an areal density of over 29 Gb/mm2.
Kioxia's and Sandisk's BiCS10 3D QLC NAND device introduced at FMS features an areal density of 37 Gb/mm2, which makes it the world's densest 3D NAND storage device formally introduced to date. The device features 332 active layers as well as an up to 4,800 MT/s interface with a separate command address (SCA) capability, but the manufacturers do not disclose the actual capacity of the IC. Typically, assuming the same number of memory cells and roughly the same die size as the 1Tb BiCS10 3D TLC NAND chip introduced last month, the new memory device should have a capacity of 1.33 Tb, though we are speculating.
