A research team from Peking University has published its findings on a two-dimensional, low-power GAAFET transistor, the first of its kind in the world. Led by Professor Peng Hailin and Qiu Chenguang, the multi-disciplinary team published in Nature, with some team members calling the discovery nothing short of a monumental breakthrough.
The Peking team has fabricated what the paper describes as a "wafer-scale multi-layer-stacked single-crystalline 2D GAA configuration."
