Researchers with the Peking University and other institutes in China have managed to miniaturize carbon nanotubes towards a 90nm FET (Field-Effect Transistor) scale — the densest ever achieved — therefore charting a course to an equivalent density as today's 10nm semiconductor nodes. Originally published in Nature Electronics, the research marks the furthest miniaturization of a carbon-tube-based FET up to now and could help China modernize its manufacturing technology in ways that shield it from the US and its allies' technological sanctions.
Carbon nanotubes have long (read: really long) been one of the most promising candidates for an updated transistor design that's capable of faster switching speeds (higher operating frequencies) with lower leakage (less wasted electricity) and, ultimately, greater efficiency and performance.
