SK hynix and ASML early on Wednesday announced that they had assembled the industry's first Twinscan NXE:5200B High-NA EUV lithography system at the company's fab M16 in Icheon, South Korea. The device will initially serve as a development vehicle for next-generation process technologies, but eventually it will be used for mass production of DRAM using leading-edge process technologies a few years down the line.
For SK hynix, the assembly of one of the industry's first Twinscan NXE:5200B EUV system with 0.55 numerical aperture optics means that it leaps ahead of its arch-rivals Micron and Samsung as well as the vast majority of companies across the broad semiconductor industry, many of which still must adopt existing EUV systems with a 0.33 numerical aperture.
